Hello everyone,
I hope you are doing well.
I have a question regarding my simulation study. I am simulating HVCMOS sensors with a thickness of 300 μm. We have three chips with different resistivities, and we want to study how the cluster size and total charge change as the resistivity increases. When I set the parameter “sensor_resistivity” to the values we have, I couldn’t notice any changes in the results. This makes me question whether this parameter works as intended, or if it requires additional parameters such as depletion voltage or doping concentration to produce accurate results.
I hope I have explained my question clearly. Any advice or help will be highly appreciated. I have attached the configuration files for your reference.
best regards,
Fajer
hv.conf (735 Bytes)
main_file.conf (1.6 KB)
pos.conf (242 Bytes)