Hi,
I am simulating He-Ions being detected with a underdepleted Timepix detector, and measuring the deposited energy by looking at the collected charge per hit pixel at detector [energy].
The amount of charge that is collected is around half of what would be expected from experimental data.
I have been trying to adjust the electric field inside the sensor with the following (experiment) given values:
[energy]
sensor_thickness = 300 um
bias_voltage = -7.4 V (reverse bias)
depletion_depth =ca. 210 um OR depletion_voltage =ca. 40 V
I have checked the formulas used in allpix to calculate the linear electric field from bias and either depth/depletion_voltage.
When comparing the (experiment) depletion_depth with the one allpix calculates when given -7.4 bias/ 40 depletion_voltage, I see that the depth from allpix is shorter.
It seems to me like the sensor in the real world has a larger active/depleted volume at -7.4 bias, or a higher electrical field than allpix assumes. The bias is the only value that is known with high certainty.
I sadly do not have access to any TCAD field sim.
Could I use other infos about the sensor material (for example the doping concentration) to improve my electric field ?
Thanks !
As I cant attach my configs right now, here are the relevant modules:
detector:
…
[energy]
type = “timepix”
position = 0 0 357.00mm
orientation = 0 0 0
sensor_thickness = 300um
chip_thickness = 100um
…
global:
[DepositionGeant4]
physics_list = QBBC_LIV #FTFP_BERT_LIV
particle_type = “ion/2/4/2/0/false”
source_energy = 1MeV
source_energy_spread = 0MeV
source_position = 0 0 -1mm
beam_direction = 0 0 1
beam_size = 0mm
number_of_particles = 1
record_all_tracks = false
[ElectricFieldReader]
name = “energy”
model = “linear”
bias_voltage = -7.4V
depletion_depth = 210um #depletion_voltage = 40V
[GenericPropagation]
temperature = 293K
charge_per_step = 50
[PulseTransfer]
[DefaultDigitizer]
electronics_noise = 0e
threshold = 0e
threshold_smearing = 0e
qdc_smearing = 0e
[CSADigitizer]
name = “energy”
model = “csa”
integration_time = 0.5e-6s
sigma_noise = 0.0e-3V
threshold = 10e-3V
feedback_capacitance = 10e-15C/V
input_capacitance = 100e-15C/V
krummenacher_current = 25e-9C/s
amp_output_capacitance = 15e-15C/V
transconductance = 50e-6C/s/V
temperature = 293.15K
clock_bin_tot = 1ns
ignore_polarity = true